Euclid E Moon: Difference between revisions
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Latest revision as of 15:19, 17 July 2026
Euclid E. Moon | |
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| Residence | Boston, MA, United States |
| Nationality | USA |
| Alma mater | Massachusetts Institute of Technology |
| Scientific career | |
| Fields | Physics, nanofabrication, nanolithography, nano-metrology |
| Institutions | Massachusetts Institute of Technology |
| Doctoral advisor | Henry I. Smith |
Euclid Eberle Moon is an American research scientist at the Massachusetts Institute of Technology (MIT), where he works in the fields of nanofabrication, nanolithography, and nanometer-scale position metrology. He is the son of the physicists [/php/DatabaseMenu.php?tab=1&memberid=436 Parry Moon] and [/php/DatabaseMenu.php?tab=1&memberid=46 Domina Eberle Spencer].
Biography
Moon was educated at the Massachusetts Institute of Technology, where he completed his doctoral work in the Department of Electrical Engineering and Computer Science under the supervision of Professor Henry I. Smith. He received his Ph.D. in 2004 with a dissertation titled Interferometric-spatial-phase imaging for sub-nanometer three-dimensional positioning. He subsequently continued at MIT as a research scientist affiliated with the NanoStructures Laboratory and the Research Laboratory of Electronics, and resides in the Boston, Massachusetts area.
As the son of Parry Moon and Domina Eberle Spencer, both of whom were long associated with MIT, Moon also co-authored theoretical physics papers with his parents on topics including the postulates of the velocity of light and the interpretation of the Michelson–Gale experiment.
Work
Moon's research centers on high-precision alignment and metrology techniques for lithography at the nanometer scale. He is a principal developer of interferometric-spatial-phase imaging (ISPI), a method that encodes three-dimensional position information in the spatial phase and frequency of interference fringes, observed through oblique-incidence, dark-field optical microscopes. Using arrays of ISPI microscopes, the technique provides continuous six-axis position measurement (X, Y, Z, and three rotational axes) with sub-nanometer precision, and has been applied to overlay and gap control in proximity and near-field lithography.
Related work by Moon and colleagues includes zone-plate-array lithography, atomic-force lithography with interferometric tip-to-substrate position metrology capable of writing sub-10-nm features with nanometer-level pattern registration, and infrared ISPI using backside wafer marks for alignment through opaque layers. He is named as an inventor on several patents arising from this research.