Charged Barrier Technology – Part I: Difference between revisions
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{{Infobox paper | {{Infobox paper | ||
| title = Charged Barrier Technology | | title = Charged Barrier Technology – Part I | ||
| author = [[Tom Bearden]], [[William Jay Fogel]] | | author = [[Tom Bearden]], [[William Jay Fogel]] | ||
| keywords = [[charged-barrier semiconductor]], [[electric field potential]], [[Hall effect]], [[solid-state amplifier]], [[transmission]] | | keywords = [[charged-barrier semiconductor]], [[electric field potential]], [[Hall effect]], [[solid-state amplifier]], [[transmission]] | ||
Revision as of 20:47, 20 July 2026
| Scientific Paper | |
|---|---|
| Title | Charged Barrier Technology – Part I |
| Author(s) | Tom Bearden, William Jay Fogel |
| Keywords | charged-barrier semiconductor, electric field potential, Hall effect, solid-state amplifier, transmission |
| Published | 1994 |
| Journal | Electric Spacecraft Journal |
| Number | 13 |
| Pages | 31-36 |
Abstract
This is a preliminary report on a new solid-state amplifier device which has very low switching voltages and little or no amplification noise. Its principle of operation is based upon the use of electric field potential; that is, variants of an electrostatic field imposed upon a base plate. The device has been tested for transmission of data over long distances without echo phenomena. The authors ask if the transmission is instantaneous and if the device undergoes weight loss due to microscale antigravity.